IEC 63284 Ed. 1.0 b:2022
- standard by International Electrotechnical Commission, 04/01/2022
- Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
- Category: IEC
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Full Description
This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.
Product Details
- Edition:
- 1.0
- Published:
- 04/01/2022
- ISBN(s):
- 9782832211016
- Number of Pages:
- 30
- File Size:
- 1 file , 970 KB
- Note:
- This product is unavailable in Ukraine, Russia, Belarus
